HN1A02F 2007-11-22 1 toshiba transistor silicon pnp epitaxial type (pct process) HN1A02F audio frequency power amplifier applications switching applications z high h fe : h fe(1) = 120~400 z low v ce(sat.) : v ce (sat) = ? 0.2 v (max.) (i c = ? 400 ma, i b = ? 8 ma) z small power motor driver application. absolute maximum ratings (ta = 25 c) (q1, q2 common) characteristic symbol rating unit collector-base voltage v cbo ?15 v collector-emitter voltage v ceo ?15 v emitter-base voltage v ebo ?5 v collector current i c ?800 ma base current i b ?160 ma collector power dissipation p c * 300 mw junction temperature t j 150 c storage temperature range t stg ?55~150 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage a nd the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if t he operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). * total rating. power dissipation per element should not exceed 200mw. electrical characteristics (ta = 25 c) (q1,q2 common) characteristic symbol test circuit test condition min typ. max unit collector cut-off current i cbo D v cb = ?15v, i e = 0 D D ? 100 na emitter cut-off current i ebo D v eb = ?5v, i c = 0 D D ? 100 na collector-emitter brakedown voltage v (br)ceo i c = ?10ma,i b = 0 ?15 D D v h fe(1) (note) D v ce = ?1v, i c = ?100ma 120 D 400 dc current gain h fe(2) v ce = ?1v, i c = ?800ma 40 D D collector-emitter saturation voltage v ce (sat) D i c = ?400ma, i b = ?8ma D D ?0.2 v base-emitter voltage v be v ce = ?5v, i c = ?10ma ?0.5 D ? 0.8 v transition frequency f t D v ce = ?5v, i c = ?10ma D 120 D mhz collector output capacitance c ob D v cb = ?10v, i e = 0, f = 1mhz D 13 D pf note: h fe classification y (y): 120~240, gr (g): 200~400 ( ) marking symbol marking equivalent circuit (top view) 1.emitter1 2.base1 3.collector2 4.emitter2 5.base2 6.collector1 (e1) (b1) (c2) (e2) (b2) (c1) jedec D eiaj D toshiba 2-3n1a weight: 0.015mg(typ) unit: mm 26
HN1A02F 2007-11-22 2 (q1,q2 common) e collector-emitter voltage v ce (v) i c ? v ce collector current i c (ma) 0 ? 8 ? 4 ? 2 0 ? 400 ? 1000 emitter common ta = 25c ? 800 i b = ? 1 ma ? 6 ? 2 ? 12 ? 10 ? 200 ? 600 ? 5 ? 6 ? 4 ? 3 0 collector current i c (ma) h fe ? i c current gain h fe 2000 ? 1 ? 30 ? 1000 ? 100 ? 10 ? 3 ? 300 500 300 100 50 30 10 emitter common v ce = ? 1 v ta = 100c 25 ? 25 1000 collector current i c (ma) v ce (sat) ? i c collector-emittersaturation votage v ce (sat) (v) ? 1 ? 0.1 ? 10 ? 300 ? 3 ? 0.03 ? 0.05 emitter common ic/ib = 50 ? 0.01 ? 30 ? 100 ? 0.3 ? 0.5 ta = 100c 25 ? 25 ? 1000 ? 1 ? 2 base-emitter voltage v be (v) i c ? v be collector current i c (ma) emitter common v ce = ? 1 v 0 ? 0.6 ? 0.4 ? 0.2 0 ? 400 ? 800 ? 600 ? 25 25 ta = 100c ? 200 ? 1.0 ? 0.8 anbient temperature ta ( c) p c* ? ta collector power disspation p c (mw) 0 175 125 150 75 100 0 300 100 400 200 500 25 50 *total rating.
HN1A02F 2007-11-22 3 restrictions on product use 20070701-en general ? the information contained herein is subject to change without notice. ? toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity an d vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshib a products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconduct or devices,? or ?toshiba semiconductor reliability handbook? etc. ? the toshiba products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuri ng equipment, industrial robotics, domestic appliances, etc.).these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. unintended usage of toshiba products listed in his document shall be made at the customer?s own risk. ? the products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringement s of patents or other rights of the third parties which may result from its use. no license is granted by implic ation or otherwise under any patents or other rights of toshiba or the third parties. ? please contact your sales representative for product- by-product details in this document regarding rohs compatibility. please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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